您当前的位置：
首页 >
文章列表页 >
Proton irradiation damage in silicon carbide junction barrier Schottky diode
ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS | 更新时间：2024-04-09
|

    • Proton irradiation damage in silicon carbide junction barrier Schottky diode

    • NUCLEAR TECHNIQUES   Vol. 46, Issue 2, Pages: 20203(2023)
    • 作者机构：

      1.中国原子能科学研究院 国防科技工业抗辐照应用技术创新中心 北京 102413

      2.兰州大学 核科学与技术学院 兰州 730000

    • 作者简介：

      LIU Cuicui, female, born in 1993, graduated from Institute of Semiconductors, Chinese Academy of Sciences with a doctoral degree in 2020, focusing on radiation effect and reliability analysis of semiconductor devices

      GUO Gang, E-mail: ggg@ciae.ac.cn

    • 基金信息：
      Young Talents Project of China National Nuclear Corporation(11FY212306000801)

    • DOI：10.11889/j.0253-3219.2023.hjs.46.020203    

      CLC： TL99

    • Published：15 February 2023，

      Received：25 June 2022，

      Revised：18 October 2022，

    扫 描 看 全 文

  • LIU Cuicui,LI Zhiming,HAN Jinhua,et al.Proton irradiation damage in silicon carbide junction barrier Schottky diode[J].NUCLEAR TECHNIQUES,2023,46(02):020203. DOI： 10.11889/j.0253-3219.2023.hjs.46.020203.

  •  
  •  
更多指标>

0

Views

0

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

No data

Related Author

No data

Related Institution

No data
0